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| PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES * RDS(ON), VGS@10V,IDS@30A=13m * RDS(ON), VGS@4.5V,IDS@30A=18m * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for Converters and Power Motor Controls * Fully Characterized Avalanche Voltage and Current * Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA * Case: TO-220 Molded Plastic * Terminals : Solderable per MIL-STD-750D,Method 1036.3 * Marking : P75N06 Drain PIN Assignment Gate 1. Gate 2. Drain 3. Source Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RJC RJA Li mi t 60 +20 75 350 105 6 2 .5 -5 5 to + 1 5 0 400 1 .2 62 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJP75N06 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 3 0 V , ID = 3 0 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 3 0 A , V G S = 0 V 0 .9 8 75 1 .5 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ VDD=30V , RL=15 ID=2A , VGEN=10V RG=2.5 V D S = 3 0 V , ID = 3 0 A V GS = 1 0 V 82 10 13.5 18.5 16.5 60 9 .0 4200 810 550 nC 25 20 ns 90 20 pF 42 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=60V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 5 A 60 1 40 1 3 .5 10.5 3 1 8 .0 m 13.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJP75N06 Typical Characteristics Curves (TA=25OC,unless otherwise noted) 100 ID - Drain-to-Source Current (A) 80 3.5V 60 40 3.0V 20 2.5V 0 0 1 2 3 4 5 V DS - Drain-to-Source Voltage (V) ID - Drain Source Current (A) V GS=4.0V, 4.5V, 5.0V, 6.0V, 10.0V 80 V DS=10V 60 40 T J=25 OC 20 T J=125 OC 0 1 1.5 2 2.5 T J=-55 OC 3 3.5 4 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 30 50 R DS(ON) - On-Resistance (m W ) 25 20 15 10 R DS(ON) - On-Resistance (m W ) I D=30A 40 30 V GS=4.5V 20 10 0 2 4 T J=125 OC V GS=10V 5 0 0 20 40 60 80 100 ID - Drain Current (A) T J=25 OC 6 8 10 V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage R DS(ON) - On-Resistance (Normalized) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 V GS=10V I D=30A -50 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 PAGE . 3 PJP75N06 VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg - Gate Charge (nC) Vgs Qg V DS =30V I D =30A Vgs(th) Qg(th) Qsw Qgs Qgd Qg Fig.6 - Gate Charge Waveform 76 Fig.7 - Gate Charge Vth - G-S Threshold Voltage (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 BVDSS - Breakdown Voltage (V) I D =250uA I D =250uA 74 72 70 68 66 64 62 -50 -25 0 25 50 75 100 125 TJ - Junction Tem perature ( oC) 150 -25 0 25 50 75 100 125 150 TJ - Junction Tem perature ( oC) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 V GS =0V IS - Source Current (A) 10 T J =125 OC 1 T J =-55 OC T J =25 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD - Source-to-Drain Voltage (V) 1.6 Fig.10 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4 |
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